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Toshiba Semiconductor and Storage TPCP8001-H(TE85LFM
MOSFET N-CH 30V 7.2A PS-8
Manufacturer # :TPCP8001-H(TE85LFM
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TPCP8001-H(TE85LFM-DS
Datasheet :
TPCP8001-H(TE85LFM Datasheet
TPCP8001-H(TE85LFM DatasheetCustomer # :
Description : MOSFET N-CH 30V 7.2A PS-8
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 1.0493 | $ 10.49 |
| 3000+ | $ 0.6995 | $ 2098.5 |
| 6000+ | $ 0.6627 | $ 3976.2 |
| 9000+ | $ 0.6136 | $ 5522.4 |
| 30000+ | $ 0.6038 | $ 18114 |
In Stock: 53
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.0493
Total :$ 1.05
Delivery :
Payment :
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TPCP8001-H(TE85LFM information
Toshiba Semiconductor and Storage TPCP8001-H(TE85LFM technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SMD, Flat Lead
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PS-8 (2.9x2.4)
- Power Dissipation ( Max):1W (Ta), 30W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:7.2A (Ta)
- Rds On ( Max) @ Id, Vgs:16mOhm @ 3.6A, 10V
- Vgs(th) ( Max) @ Id:2.3V @ 1mA
- Gate Charge ( Qg) ( Max) @ Vgs:11 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:640 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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