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1 : $0.6045
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Toshiba Semiconductor and Storage TPCF8B01(TE85L,F,M
MOSFET P-CH 20V 2.7A VS-8
Manufacturer # :TPCF8B01(TE85L,F,M
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TPCF8B01(TE85L,F,M-DS
Datasheet :
TPCF8B01(TE85L,F,M Datasheet
TPCF8B01(TE85L,F,M DatasheetCustomer # :
Description : MOSFET P-CH 20V 2.7A VS-8
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.9068 | $ 9.07 |
| 4000+ | $ 0.6045 | $ 2418 |
| 8000+ | $ 0.5727 | $ 4581.6 |
| 12000+ | $ 0.5303 | $ 6363.6 |
| 28000+ | $ 0.5218 | $ 14610.4 |
In Stock: 84
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.9068
Total :$ 0.91
Delivery :
Payment :
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TPCF8B01(TE85L,F,M information
Toshiba Semiconductor and Storage TPCF8B01(TE85L,F,M technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SMD, Flat Lead
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:VS-8 (2.9x1.5)
- Power Dissipation ( Max):330mW (Ta)
- F E T Type:P-Channel
- F E T Feature:Schottky Diode (Isolated)
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:2.7A (Ta)
- Rds On ( Max) @ Id, Vgs:110mOhm @ 1.4A, 4.5V
- Vgs(th) ( Max) @ Id:1.2V @ 200µA
- Gate Charge ( Qg) ( Max) @ Vgs:6 nC @ 5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:470 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):1.8V, 4.5V
- Vgs ( Max):±8V
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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