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Toshiba Semiconductor and Storage TPCC8067-H,LQ(S
MOSFET N-CH 30V 9A 8TSON
Manufacturer # :TPCC8067-H,LQ(S
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TPCC8067-H,LQ(S-DS
Datasheet :
TPCC8067-H,LQ(S Datasheet
TPCC8067-H,LQ(S DatasheetCustomer # :
Description : MOSFET N-CH 30V 9A 8TSON
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.7988 | $ 7.99 |
| 3000+ | $ 0.5325 | $ 1597.5 |
| 6000+ | $ 0.5045 | $ 3027 |
| 9000+ | $ 0.4671 | $ 4203.9 |
| 30000+ | $ 0.4597 | $ 13791 |
In Stock: 54
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.7988
Total :$ 0.80
Delivery :
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TPCC8067-H,LQ(S information
Toshiba Semiconductor and Storage TPCC8067-H,LQ(S technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-PowerVDFN
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-TSON Advance (3.1x3.1)
- Power Dissipation ( Max):700mW (Ta), 15W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:9A (Ta)
- Rds On ( Max) @ Id, Vgs:25mOhm @ 4.5A, 10V
- Vgs(th) ( Max) @ Id:2.3V @ 100µA
- Gate Charge ( Qg) ( Max) @ Vgs:9.5 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:690 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:Vendor is not defined
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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