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Toshiba Semiconductor and Storage TPCA8012-H(TE12LQM
MOSFET N-CH 30V 40A 8SOP
Manufacturer # :TPCA8012-H(TE12LQM
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TPCA8012-H(TE12LQM-DS
Datasheet :
TPCA8012-H(TE12LQM Datasheet
TPCA8012-H(TE12LQM DatasheetCustomer # :
Description : MOSFET N-CH 30V 40A 8SOP
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 1.9728 | $ 19.73 |
| 3000+ | $ 1.3152 | $ 3945.6 |
| 6000+ | $ 1.2526 | $ 7515.6 |
| 9000+ | $ 1.1948 | $ 10753.2 |
In Stock: 76
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.9728
Total :$ 1.97
Delivery :
Payment :
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TPCA8012-H(TE12LQM information
Toshiba Semiconductor and Storage TPCA8012-H(TE12LQM technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-PowerVDFN
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-SOP Advance (5x5)
- Power Dissipation ( Max):-
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:40A (Ta)
- Rds On ( Max) @ Id, Vgs:4.9mOhm @ 20A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 1mA
- Gate Charge ( Qg) ( Max) @ Vgs:42 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:3713 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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