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1 : $0.4140
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Toshiba Semiconductor and Storage TPC8129,LQ(S
MOSFET P-CH 30V 9A 8SOP
Manufacturer # :TPC8129,LQ(S
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TPC8129,LQ(S-DS
Datasheet :
TPC8129,LQ(S Datasheet
TPC8129,LQ(S DatasheetCustomer # :
Description : MOSFET P-CH 30V 9A 8SOP
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 5+ | $ 0.4140 | $ 2.07 |
| 50+ | $ 0.2016 | $ 10.08 |
| 100+ | $ 0.1836 | $ 18.36 |
| 500+ | $ 0.1494 | $ 74.7 |
| 1000+ | $ 0.1395 | $ 139.5 |
In Stock: 17928
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.414
Total :$ 0.41
Delivery :
Payment :
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TPC8129,LQ(S information
Toshiba Semiconductor and Storage TPC8129,LQ(S technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-SOP
- Power Dissipation ( Max):1W (Ta)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:9A (Ta)
- Rds On ( Max) @ Id, Vgs:22mOhm @ 4.5A, 10V
- Vgs(th) ( Max) @ Id:2V @ 200µA
- Gate Charge ( Qg) ( Max) @ Vgs:39 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1650 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):+20V, -25V
- EU RoHS Status:RoHS Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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