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Toshiba Semiconductor and Storage TPC8066-H,LQ(S
MOSFET N-CH 30V 11A 8SOP
Manufacturer # :TPC8066-H,LQ(S
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TPC8066-H,LQ(S-DS
Datasheet :
TPC8066-H,LQ(S Datasheet
TPC8066-H,LQ(S DatasheetCustomer # :
Description : MOSFET N-CH 30V 11A 8SOP
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 1.0406 | $ 10.41 |
| 2500+ | $ 0.6937 | $ 1734.25 |
| 5000+ | $ 0.6572 | $ 3286 |
| 12500+ | $ 0.6085 | $ 7606.25 |
| 25000+ | $ 0.5988 | $ 14970 |
In Stock: 50
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.0406
Total :$ 1.04
Delivery :
Payment :
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TPC8066-H,LQ(S information
Toshiba Semiconductor and Storage TPC8066-H,LQ(S technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-SOP
- Power Dissipation ( Max):1W (Ta)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:11A (Ta)
- Rds On ( Max) @ Id, Vgs:16mOhm @ 5.5A, 10V
- Vgs(th) ( Max) @ Id:2.3V @ 100µA
- Gate Charge ( Qg) ( Max) @ Vgs:15 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1100 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:Vendor is not defined
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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