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Toshiba Semiconductor and Storage TPC6110(TE85L,F,M)
MOSFET P-CH 30V 4.5A VS-6
Manufacturer # :TPC6110(TE85L,F,M)
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TPC6110(TE85L,F,M)-DS
Datasheet :
TPC6110(TE85L,F,M) Datasheet
TPC6110(TE85L,F,M) DatasheetCustomer # :
Description : MOSFET P-CH 30V 4.5A VS-6
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.7038 | $ 7.04 |
| 3000+ | $ 0.4692 | $ 1407.6 |
| 6000+ | $ 0.4445 | $ 2667 |
| 9000+ | $ 0.4116 | $ 3704.4 |
| 30000+ | $ 0.4050 | $ 12150 |
In Stock: 79
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.7038
Total :$ 0.70
Delivery :
Payment :
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TPC6110(TE85L,F,M) information
Toshiba Semiconductor and Storage TPC6110(TE85L,F,M) technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Last Time Buy
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:SOT-23-6 Thin, TSOT-23-6
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:VS-6 (2.9x2.8)
- Power Dissipation ( Max):700mW (Ta)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:4.5A (Ta)
- Rds On ( Max) @ Id, Vgs:56mOhm @ 2.2A, 10V
- Vgs(th) ( Max) @ Id:2V @ 100µA
- Gate Charge ( Qg) ( Max) @ Vgs:14 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:510 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):-
- Vgs ( Max):-
- EU RoHS Status:RoHS Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.21.0095
- REACH Status:Vendor is not defined
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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