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Toshiba Semiconductor and Storage TPC6012(TE85L,F,M)
MOSFET N-CH 20V 6A VS-6
Manufacturer # :TPC6012(TE85L,F,M)
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TPC6012(TE85L,F,M)-DS
Datasheet :
TPC6012(TE85L,F,M) Datasheet
TPC6012(TE85L,F,M) DatasheetCustomer # :
Description : MOSFET N-CH 20V 6A VS-6
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.8463 | $ 8.46 |
| 3000+ | $ 0.5642 | $ 1692.6 |
| 6000+ | $ 0.5345 | $ 3207 |
| 9000+ | $ 0.4949 | $ 4454.1 |
| 30000+ | $ 0.4870 | $ 14610 |
In Stock: 42
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.8463
Total :$ 0.85
Delivery :
Payment :
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TPC6012(TE85L,F,M) information
Toshiba Semiconductor and Storage TPC6012(TE85L,F,M) technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Last Time Buy
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:SOT-23-6 Thin, TSOT-23-6
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:VS-6 (2.9x2.8)
- Power Dissipation ( Max):700mW (Ta)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:6A (Ta)
- Rds On ( Max) @ Id, Vgs:20mOhm @ 3A, 4.5V
- Vgs(th) ( Max) @ Id:1.2V @ 200µA
- Gate Charge ( Qg) ( Max) @ Vgs:9 nC @ 5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:630 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):2.5V, 4.5V
- Vgs ( Max):±12V
- EU RoHS Status:RoHS Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.21.0095
- REACH Status:Vendor is not defined
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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