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Toshiba Semiconductor and Storage TPC6008-H(TE85L,FM
MOSFET N-CH 30V 5.9A VS-6
Manufacturer # :TPC6008-H(TE85L,FM
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TPC6008-H(TE85L,FM-DS
Datasheet :
TPC6008-H(TE85L,FM Datasheet
TPC6008-H(TE85L,FM DatasheetCustomer # :
Description : MOSFET N-CH 30V 5.9A VS-6
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.7772 | $ 7.77 |
| 3000+ | $ 0.5181 | $ 1554.3 |
| 6000+ | $ 0.4909 | $ 2945.4 |
| 9000+ | $ 0.4545 | $ 4090.5 |
| 30000+ | $ 0.4472 | $ 13416 |
In Stock: 628
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.7772
Total :$ 0.78
Delivery :
Payment :
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TPC6008-H(TE85L,FM information
Toshiba Semiconductor and Storage TPC6008-H(TE85L,FM technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Last Time Buy
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:SOT-23-6 Thin, TSOT-23-6
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:VS-6 (2.9x2.8)
- Power Dissipation ( Max):700mW (Ta)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:5.9A (Ta)
- Rds On ( Max) @ Id, Vgs:60mOhm @ 3A, 10V
- Vgs(th) ( Max) @ Id:2.3V @ 100µA
- Gate Charge ( Qg) ( Max) @ Vgs:4.8 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:300 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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