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Toshiba Semiconductor and Storage TK8P60W,RVQ
Manufacturer # :TK8P60W,RVQ
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TK8P60W,RVQ-DS
Datasheet : TK8P60W,RVQ Datasheet
Customer # :
Description : MOSFET N CH 600V 8A DPAK
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In Stock: 2096
MOQ :1 PCS
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Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 6.44
Total :$ 6.44
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TK8P60W,RVQ information
Toshiba Semiconductor and Storage TK8P60W,RVQ technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:DPAK
- Power Dissipation ( Max):80W (Tc)
- F E T Type:N-Channel
- F E T Feature:Super Junction
- Drain to Source Voltage ( Vdss):600 V
- Current - Continuous Drain ( Id) @ 25° C:8A (Ta)
- Rds On ( Max) @ Id, Vgs:500mOhm @ 4A, 10V
- Vgs(th) ( Max) @ Id:3.7V @ 400µA
- Gate Charge ( Qg) ( Max) @ Vgs:18.5 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:570 pF @ 300 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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