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Toshiba Semiconductor and Storage TK7J90E,S1E
MOSFET N-CH 900V 7A TO3P
Manufacturer # :TK7J90E,S1E
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TK7J90E,S1E-DS
Datasheet :
TK7J90E,S1E Datasheet
TK7J90E,S1E DatasheetCustomer # :
Description : MOSFET N-CH 900V 7A TO3P
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 2.2680 | $ 2.27 |
| 10+ | $ 1.8270 | $ 18.27 |
| 100+ | $ 1.5750 | $ 157.5 |
| 250+ | $ 1.4130 | $ 353.25 |
| 500+ | $ 1.2600 | $ 630 |
In Stock: 1618
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 2.268
Total :$ 2.27
Delivery :
Payment :
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TK7J90E,S1E information
Toshiba Semiconductor and Storage TK7J90E,S1E technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-3P-3, SC-65-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-3P(N)
- Power Dissipation ( Max):200W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):900 V
- Current - Continuous Drain ( Id) @ 25° C:7A (Ta)
- Rds On ( Max) @ Id, Vgs:2Ohm @ 3.5A, 10V
- Vgs(th) ( Max) @ Id:4V @ 700µA
- Gate Charge ( Qg) ( Max) @ Vgs:32 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1350 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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