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Toshiba Semiconductor and Storage TK7E80W,S1X
MOSFET N-CH 800V 6.5A TO220
Manufacturer # :TK7E80W,S1X
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TK7E80W,S1X-DS
Datasheet :
TK7E80W,S1X Datasheet
TK7E80W,S1X DatasheetCustomer # :
Description : MOSFET N-CH 800V 6.5A TO220
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 7.4800 | $ 7.48 |
| 10+ | $ 4.9080 | $ 49.08 |
| 100+ | $ 3.4418 | $ 344.18 |
| 500+ | $ 2.8139 | $ 1406.95 |
| 1000+ | $ 2.6118 | $ 2611.8 |
In Stock: 1520
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 7.48
Total :$ 7.48
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TK7E80W,S1X information
Toshiba Semiconductor and Storage TK7E80W,S1X technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:150°C
- Mounting Type:Through Hole
- Package / Case:TO-220-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-220
- Power Dissipation ( Max):110W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):800 V
- Current - Continuous Drain ( Id) @ 25° C:6.5A (Ta)
- Rds On ( Max) @ Id, Vgs:950mOhm @ 3.3A, 10V
- Vgs(th) ( Max) @ Id:4V @ 280µA
- Gate Charge ( Qg) ( Max) @ Vgs:13 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:700 pF @ 300 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±20V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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