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Toshiba Semiconductor and Storage TK6A65W,S5X
MOSFET N-CH 650V 5.8A TO220SIS
Manufacturer # :TK6A65W,S5X
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TK6A65W,S5X-DS
Datasheet :
TK6A65W,S5X Datasheet
TK6A65W,S5X DatasheetCustomer # :
Description : MOSFET N-CH 650V 5.8A TO220SIS
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 4.4200 | $ 4.42 |
| 10+ | $ 2.8380 | $ 28.38 |
| 100+ | $ 1.9308 | $ 193.08 |
| 500+ | $ 1.5416 | $ 770.8 |
| 1000+ | $ 1.4163 | $ 1416.3 |
In Stock: 2134
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 4.42
Total :$ 4.42
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Payment :
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TK6A65W,S5X information
Toshiba Semiconductor and Storage TK6A65W,S5X technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-220-3 Full Pack
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-220SIS
- Power Dissipation ( Max):30W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):650 V
- Current - Continuous Drain ( Id) @ 25° C:5.8A (Ta)
- Rds On ( Max) @ Id, Vgs:1Ohm @ 2.9A, 10V
- Vgs(th) ( Max) @ Id:3.5V @ 180µA
- Gate Charge ( Qg) ( Max) @ Vgs:11 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:390 pF @ 300 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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