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Toshiba Semiconductor and Storage TK60P03M1,RQ(S
MOSFET N-CH 30V 60A DPAK
Manufacturer # :TK60P03M1,RQ(S
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TK60P03M1,RQ(S-DS
Datasheet :
TK60P03M1,RQ(S Datasheet
TK60P03M1,RQ(S DatasheetCustomer # :
Description : MOSFET N-CH 30V 60A DPAK
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 1.2863 | $ 12.86 |
| 2000+ | $ 0.8575 | $ 1715 |
| 6000+ | $ 0.8167 | $ 4900.2 |
| 10000+ | $ 0.7790 | $ 7790 |
In Stock: 82
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.2863
Total :$ 1.29
Delivery :
Payment :
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TK60P03M1,RQ(S information
Toshiba Semiconductor and Storage TK60P03M1,RQ(S technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:DPAK
- Power Dissipation ( Max):63W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:60A (Ta)
- Rds On ( Max) @ Id, Vgs:6.4mOhm @ 30A, 10V
- Vgs(th) ( Max) @ Id:2.3V @ 500µA
- Gate Charge ( Qg) ( Max) @ Vgs:40 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2700 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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