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Toshiba Semiconductor and Storage TK4R4P06PL,RQ
MOSFET N-CHANNEL 60V 58A DPAK
Manufacturer # :TK4R4P06PL,RQ
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TK4R4P06PL,RQ-DS
Datasheet :
TK4R4P06PL,RQ Datasheet
TK4R4P06PL,RQ DatasheetCustomer # :
Description : MOSFET N-CHANNEL 60V 58A DPAK
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.7915 | $ 7.92 |
| 2500+ | $ 0.4397 | $ 1099.25 |
In Stock: 15164
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.7915
Total :$ 0.79
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TK4R4P06PL,RQ information
Toshiba Semiconductor and Storage TK4R4P06PL,RQ technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:175°C
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:DPAK
- Power Dissipation ( Max):87W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):60 V
- Current - Continuous Drain ( Id) @ 25° C:58A (Tc)
- Rds On ( Max) @ Id, Vgs:4.4mOhm @ 29A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 500µA
- Gate Charge ( Qg) ( Max) @ Vgs:48.2 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:3280 pF @ 30 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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