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1 : $0.6003
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Toshiba Semiconductor and Storage TK4P60DA(T6RSS-Q)
MOSFET N-CH 600V 3.5A DPAK
Manufacturer # :TK4P60DA(T6RSS-Q)
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TK4P60DA(T6RSS-Q)-DS
Datasheet :
TK4P60DA(T6RSS-Q) Datasheet
TK4P60DA(T6RSS-Q) DatasheetCustomer # :
Description : MOSFET N-CH 600V 3.5A DPAK
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 5+ | $ 0.6003 | $ 3 |
| 50+ | $ 0.2925 | $ 14.63 |
| 100+ | $ 0.2673 | $ 26.73 |
| 200+ | $ 0.2664 | $ 53.28 |
| 500+ | $ 0.2169 | $ 108.45 |
In Stock: 5700
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.6003
Total :$ 0.60
Delivery :
Payment :
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TK4P60DA(T6RSS-Q) information
Toshiba Semiconductor and Storage TK4P60DA(T6RSS-Q) technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:D-Pak
- Power Dissipation ( Max):80W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):600 V
- Current - Continuous Drain ( Id) @ 25° C:3.5A (Ta)
- Rds On ( Max) @ Id, Vgs:2.2Ohm @ 1.8A, 10V
- Vgs(th) ( Max) @ Id:4.4V @ 1mA
- Gate Charge ( Qg) ( Max) @ Vgs:11 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:490 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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