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Toshiba Semiconductor and Storage TK45P03M1,RQ(S
MOSFET N-CH 30V 45A DPAK
Manufacturer # :TK45P03M1,RQ(S
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TK45P03M1,RQ(S-DS
Datasheet :
TK45P03M1,RQ(S Datasheet
TK45P03M1,RQ(S DatasheetCustomer # :
Description : MOSFET N-CH 30V 45A DPAK
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 1.0148 | $ 10.15 |
| 2000+ | $ 0.6765 | $ 1353 |
| 6000+ | $ 0.6408 | $ 3844.8 |
| 10000+ | $ 0.5934 | $ 5934 |
In Stock: 2946
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.0148
Total :$ 1.01
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Payment :
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TK45P03M1,RQ(S information
Toshiba Semiconductor and Storage TK45P03M1,RQ(S technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Last Time Buy
- Operating Temperature:-
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:DPAK
- Power Dissipation ( Max):-
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:45A (Ta)
- Rds On ( Max) @ Id, Vgs:9.7mOhm @ 22.5A, 10V
- Vgs(th) ( Max) @ Id:2.3V @ 200µA
- Gate Charge ( Qg) ( Max) @ Vgs:25 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1500 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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