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Toshiba Semiconductor and Storage TK40P04M1(T6RSS-Q)
MOSFET N-CH 40V 40A DP
Manufacturer # :TK40P04M1(T6RSS-Q)
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TK40P04M1(T6RSS-Q)-DS
Datasheet :
TK40P04M1(T6RSS-Q) Datasheet
TK40P04M1(T6RSS-Q) DatasheetCustomer # :
Description : MOSFET N-CH 40V 40A DP
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.7470 | $ 7.47 |
| 2000+ | $ 0.4980 | $ 996 |
| 6000+ | $ 0.4718 | $ 2830.8 |
| 10000+ | $ 0.4368 | $ 4368 |
In Stock: 79
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.747
Total :$ 0.75
Delivery :
Payment :
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TK40P04M1(T6RSS-Q) information
Toshiba Semiconductor and Storage TK40P04M1(T6RSS-Q) technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Last Time Buy
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:D-Pak
- Power Dissipation ( Max):47W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):40 V
- Current - Continuous Drain ( Id) @ 25° C:40A (Ta)
- Rds On ( Max) @ Id, Vgs:11mOhm @ 20A, 10V
- Vgs(th) ( Max) @ Id:2.3V @ 200µA
- Gate Charge ( Qg) ( Max) @ Vgs:29 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1920 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:Vendor is not defined
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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