Images are for reference only.
1 : $3.4000
First-time registration with orders over $2,000 receives a $100 coupon. Register Now !
Toshiba Semiconductor and Storage TK3A60DA(Q,M)
Manufacturer # :TK3A60DA(Q,M)
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TK3A60DA(Q,M)-DS
Datasheet : TK3A60DA(Q,M) Datasheet
Customer # :
Description : MOSFET N-CH 600V 2.5A TO220SIS
Pricing (USD) : *To apply for a price, please click the Send Target Price button
In Stock: 1501
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 3.4
Total :$ 3.40
Delivery :
Payment :
Help you to save your cost and time
Strict quality inspection and Reliable package for goods
Fast Reliable delivery to save time
Provide 365 days warranty after-sales service
TK3A60DA(Q,M) information
Toshiba Semiconductor and Storage TK3A60DA(Q,M) technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-220-3 Full Pack
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-220SIS
- Power Dissipation ( Max):30W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):600 V
- Current - Continuous Drain ( Id) @ 25° C:2.5A (Ta)
- Rds On ( Max) @ Id, Vgs:2.8Ohm @ 1.3A, 10V
- Vgs(th) ( Max) @ Id:4.4V @ 1mA
- Gate Charge ( Qg) ( Max) @ Vgs:9 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:380 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
Related Products Recommended
We can prompt fulfill customer requests for electronic components, even for scarce parts in the market.