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Toshiba Semiconductor and Storage TK3A60DA(Q,M)

MOSFET N-CH 600V 2.5A TO220SIS
part number has RoHS
Manufacturer # :TK3A60DA(Q,M)
Dasenic # :TK3A60DA(Q,M)-DS
Customer # :
Description : MOSFET N-CH 600V 2.5A TO220SIS
Pricing (USD) : *To apply for a price, please click the Send Target Price button
QuantityUnit PriceTotal
1+$ 3.4000$ 3.4
10+$ 2.1600$ 21.6
100+$ 1.4486$ 144.86
500+$ 1.1432$ 571.6
1000+$ 1.0448$ 1044.8
In Stock: 1501
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 3.4
Total :$ 3.40
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TK3A60DA(Q,M) information

  • Toshiba Semiconductor and Storage TK3A60DA(Q,M) technical specifications, attributes, parameters.
  • Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
  • Product Status:Active
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack
  • Technology:MOSFET (Metal Oxide)
  • Supplier Device Package:TO-220SIS
  • Power Dissipation ( Max):30W (Tc)
  • F E T Type:N-Channel
  • F E T Feature:-
  • Drain to Source Voltage ( Vdss):600 V
  • Current - Continuous Drain ( Id) @ 25° C:2.5A (Ta)
  • Rds On ( Max) @ Id, Vgs:2.8Ohm @ 1.3A, 10V
  • Vgs(th) ( Max) @ Id:4.4V @ 1mA
  • Gate Charge ( Qg) ( Max) @ Vgs:9 nC @ 10 V
  • Input Capacitance ( Ciss) ( Max) @ Vds:380 pF @ 25 V
  • Drive Voltage ( Max Rds On, Min Rds On):10V
  • Vgs ( Max):±30V
  • EU RoHS Status:RoHS Compliant
  • REACH Status:REACH is not affected
  • US ECCN:EAR99
  • China RoHS Status:Green Symbol: Green and environmentally friendly product

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