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Toshiba Semiconductor and Storage TK33S10N1L,LQ
MOSFET N-CH 100V 33A DPAK
Manufacturer # :TK33S10N1L,LQ
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TK33S10N1L,LQ-DS
Datasheet :
TK33S10N1L,LQ Datasheet
TK33S10N1L,LQ DatasheetCustomer # :
Description : MOSFET N-CH 100V 33A DPAK
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 1.5930 | $ 1.59 |
| 10+ | $ 1.2780 | $ 12.78 |
| 25+ | $ 1.2330 | $ 30.83 |
| 100+ | $ 0.9180 | $ 91.8 |
| 500+ | $ 0.7488 | $ 374.4 |
In Stock: 4701
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.593
Total :$ 1.59
Delivery :
Payment :
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TK33S10N1L,LQ information
Toshiba Semiconductor and Storage TK33S10N1L,LQ technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:175°C
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:DPAK+
- Power Dissipation ( Max):125W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):100 V
- Current - Continuous Drain ( Id) @ 25° C:33A (Ta)
- Rds On ( Max) @ Id, Vgs:9.7mOhm @ 16.5A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 500µA
- Gate Charge ( Qg) ( Max) @ Vgs:33 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2250 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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