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Toshiba TK31V60W5,LVQ
MOSFET N-CH 600V 30.8A 4DFN
Manufacturer # :TK31V60W5,LVQ
Manufacturer :Toshiba
Dasenic # :6C676E-DS
Datasheet :
TK31V60W5,LVQ Datasheet
TK31V60W5,LVQ DatasheetSample :
Customer # :
Description : MOSFET N-CH 600V 30.8A 4DFN 4-VSFN Exposed Pad
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 4.041000 | $ 4.04 |
| 10+ | $ 3.042000 | $ 30.42 |
| 25+ | $ 2.952000 | $ 73.8 |
| 100+ | $ 2.178000 | $ 217.8 |
| 500+ | $ 1.809000 | $ 904.5 |
In Stock: 12007
MOQ :1 PCS
Packaging :4-VSFN Exposed Pad
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 4.041
Total :$ 4.04
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/Single MOSFETs
- Product Status:Active
- Operating Temperature:150°C (TA)
- Package / Case:4-VSFN Exposed Pad
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:4-DFN-EP (8x8)
- Power Dissipation ( Max):240W (Tc)
- F E T Type:N-Channel
- Drain to Source Voltage ( Vdss):600 V
- Current - Continuous Drain ( Id) @ 25° C:30.8A (Ta)
- Rds On ( Max) @ Id, Vgs:109mOhm @ 15.4A, 10V
- Vgs(th) ( Max) @ Id:4.5V @ 1.5mA
- Gate Charge ( Qg) ( Max) @ Vgs:105 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:3000 pF @ 300 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
