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Toshiba Semiconductor and Storage TK2Q60D(Q)
MOSFET N-CH 600V 2A PW-MOLD2
Manufacturer # :TK2Q60D(Q)
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TK2Q60D(Q)-DS
Datasheet :
TK2Q60D(Q) Datasheet
TK2Q60D(Q) DatasheetCustomer # :
Description : MOSFET N-CH 600V 2A PW-MOLD2
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.9180 | $ 0.92 |
| 10+ | $ 0.6138 | $ 6.14 |
| 100+ | $ 0.4923 | $ 49.23 |
| 200+ | $ 0.4266 | $ 85.32 |
| 400+ | $ 0.3321 | $ 132.84 |
In Stock: 1861
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.918
Total :$ 0.92
Delivery :
Payment :
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TK2Q60D(Q) information
Toshiba Semiconductor and Storage TK2Q60D(Q) technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-251-3 Stub Leads, IPak
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PW-MOLD2
- Power Dissipation ( Max):60W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):600 V
- Current - Continuous Drain ( Id) @ 25° C:2A (Ta)
- Rds On ( Max) @ Id, Vgs:4.3Ohm @ 1A, 10V
- Vgs(th) ( Max) @ Id:4.4V @ 1mA
- Gate Charge ( Qg) ( Max) @ Vgs:7 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:280 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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