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Toshiba Semiconductor and Storage TK290P65Y,RQ
MOSFET N-CH 650V 11.5A DPAK
Manufacturer # :TK290P65Y,RQ
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TK290P65Y,RQ-DS
Datasheet :
TK290P65Y,RQ Datasheet
TK290P65Y,RQ DatasheetCustomer # :
Description : MOSFET N-CH 650V 11.5A DPAK
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 1.6830 | $ 1.68 |
| 10+ | $ 1.4040 | $ 14.04 |
| 100+ | $ 1.1160 | $ 111.6 |
| 250+ | $ 1.0260 | $ 256.5 |
| 500+ | $ 0.9360 | $ 468 |
In Stock: 11976
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.683
Total :$ 1.68
Delivery :
Payment :
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TK290P65Y,RQ information
Toshiba Semiconductor and Storage TK290P65Y,RQ technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:DPAK
- Power Dissipation ( Max):100W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):650 V
- Current - Continuous Drain ( Id) @ 25° C:11.5A (Tc)
- Rds On ( Max) @ Id, Vgs:290mOhm @ 5.8A, 10V
- Vgs(th) ( Max) @ Id:4V @ 450µA
- Gate Charge ( Qg) ( Max) @ Vgs:25 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:730 pF @ 300 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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