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Toshiba Semiconductor and Storage TK25S06N1L,LQ
MOSFET N-CH 60V 25A DPAK
Manufacturer # :TK25S06N1L,LQ
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TK25S06N1L,LQ-DS
Datasheet :
TK25S06N1L,LQ Datasheet
TK25S06N1L,LQ DatasheetCustomer # :
Description : MOSFET N-CH 60V 25A DPAK
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.5678 | $ 5.68 |
| 2000+ | $ 0.3785 | $ 757 |
| 4000+ | $ 0.3503 | $ 1401.2 |
| 6000+ | $ 0.3359 | $ 2015.4 |
| 10000+ | $ 0.3330 | $ 3330 |
In Stock: 42191
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.5678
Total :$ 0.57
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TK25S06N1L,LQ information
Toshiba Semiconductor and Storage TK25S06N1L,LQ technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:175°C
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:DPAK+
- Power Dissipation ( Max):57W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):60 V
- Current - Continuous Drain ( Id) @ 25° C:25A (Ta)
- Rds On ( Max) @ Id, Vgs:18.5mOhm @ 12.5A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 100µA
- Gate Charge ( Qg) ( Max) @ Vgs:15 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:855 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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