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Toshiba Semiconductor and Storage TK25N60X5,S1F
MOSFET N-CH 600V 25A TO247
Manufacturer # :TK25N60X5,S1F
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TK25N60X5,S1F-DS
Datasheet :
TK25N60X5,S1F Datasheet
TK25N60X5,S1F DatasheetCustomer # :
Description : MOSFET N-CH 600V 25A TO247
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 4.7970 | $ 4.8 |
| 10+ | $ 3.2022 | $ 32.02 |
| 100+ | $ 2.2937 | $ 229.37 |
| 500+ | $ 1.9053 | $ 952.65 |
| 1000+ | $ 1.8563 | $ 1856.3 |
In Stock: 1576
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 4.797
Total :$ 4.80
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TK25N60X5,S1F information
Toshiba Semiconductor and Storage TK25N60X5,S1F technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-247-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-247
- Power Dissipation ( Max):180W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):600 V
- Current - Continuous Drain ( Id) @ 25° C:25A (Ta)
- Rds On ( Max) @ Id, Vgs:140mOhm @ 7.5A, 10V
- Vgs(th) ( Max) @ Id:4.5V @ 1.2mA
- Gate Charge ( Qg) ( Max) @ Vgs:60 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2400 pF @ 300 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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