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Toshiba Semiconductor and Storage TK1R5R04PB,LXGQ
MOSFET N-CH 40V 160A D2PAK
Manufacturer # :TK1R5R04PB,LXGQ
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TK1R5R04PB,LXGQ-DS
Datasheet :
TK1R5R04PB,LXGQ Datasheet
TK1R5R04PB,LXGQ DatasheetCustomer # :
Description : MOSFET N-CH 40V 160A D2PAK
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 1.0087 | $ 1.01 |
| 100+ | $ 0.9885 | $ 98.85 |
| 500+ | $ 0.9490 | $ 474.5 |
| 1000+ | $ 0.9110 | $ 911 |
In Stock: 22130
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.0087
Total :$ 1.01
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TK1R5R04PB,LXGQ information
Toshiba Semiconductor and Storage TK1R5R04PB,LXGQ technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:175°C
- Mounting Type:Surface Mount
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:D2PAK+
- Power Dissipation ( Max):205W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):40 V
- Current - Continuous Drain ( Id) @ 25° C:160A (Ta)
- Rds On ( Max) @ Id, Vgs:1.5mOhm @ 80A, 10V
- Vgs(th) ( Max) @ Id:3V @ 500µA
- Gate Charge ( Qg) ( Max) @ Vgs:103 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:5500 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):6V, 10V
- Vgs ( Max):±20V
- MSL Rating:3 (168 Hours,30°C/60%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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