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Toshiba Semiconductor and Storage TK17E80W,S1X

In Stock: 1594
MOQ: 1
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1-1$5.6160-
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Toshiba Semiconductor and Storage TK17E80W,S1X technical specifications, attributes, parameters.

Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Active
Operating Temperature:150°C
Mounting Type:Through Hole
Package / Case:TO-220-3
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220
Power Dissipation ( Max):180W (Tc)
F E T Type:N-Channel
F E T Feature:-
Drain to Source Voltage ( Vdss):800 V
Current - Continuous Drain ( Id) @ 25° C:17A (Ta)
Rds On ( Max) @ Id, Vgs:290mOhm @ 8.5A, 10V
Vgs(th) ( Max) @ Id:4V @ 850µA
Gate Charge ( Qg) ( Max) @ Vgs:32 nC @ 10 V
Input Capacitance ( Ciss) ( Max) @ Vds:2050 pF @ 300 V
Drive Voltage ( Max Rds On, Min Rds On):10V
Vgs ( Max):±20V
EU RoHS Status:RoHS Compliant
REACH Status:REACH is not affected
US ECCN:EAR99
China RoHS Status:Green Symbol: Green and environmentally friendly product
TK17E80W,S1X provided by Toshiba Semiconductor and Storage
Toshiba America Electronic Components, Inc. (TAEC) is the North America electronic components business of Toshiba. TAEC offers a broad IC and discrete product line including high-end microcontrollers, ASICs and ASSPs for automotive, multimedia, industrial, telecoms and networking applications. The company also has a wide range of power semiconductor solutions as well as storage products including Enterprise and Consumer HDDs.TAEC was established in 1989, providing design, manufacturing, marketing and sales, with offices in United States and Latin America.

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Ratings and Reviews
Great Product

John D.

Excellent product quality and fast shipping service. Will definitely purchase again!

Good Experience

Sarah M.

Smooth transaction process and responsive customer support. Highly recommended!

Satisfied

Mike R.

Accurate product description and arrived earlier than expected.

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