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Toshiba Semiconductor and Storage TK16V60W,LVQ
Manufacturer # :TK16V60W,LVQ
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TK16V60W,LVQ-DS
Datasheet : TK16V60W,LVQ Datasheet
Customer # :
Description : MOSFET N-CH 600V 15.8A 4DFN
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In Stock: 788
MOQ :1 PCS
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Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
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Unit Price :$ 8.32
Total :$ 8.32
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TK16V60W,LVQ information
Toshiba Semiconductor and Storage TK16V60W,LVQ technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:4-VSFN Exposed Pad
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:4-DFN-EP (8x8)
- Power Dissipation ( Max):139W (Tc)
- F E T Type:N-Channel
- F E T Feature:Super Junction
- Drain to Source Voltage ( Vdss):600 V
- Current - Continuous Drain ( Id) @ 25° C:15.8A (Ta)
- Rds On ( Max) @ Id, Vgs:190mOhm @ 7.9A, 10V
- Vgs(th) ( Max) @ Id:3.7V @ 790µA
- Gate Charge ( Qg) ( Max) @ Vgs:38 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1350 pF @ 300 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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