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Toshiba Semiconductor and Storage TK16J60W,S1VQ
MOSFET N-CH 600V 15.8A TO3P
Manufacturer # :TK16J60W,S1VQ
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TK16J60W,S1VQ-DS
Datasheet :
TK16J60W,S1VQ Datasheet
TK16J60W,S1VQ DatasheetCustomer # :
Description : MOSFET N-CH 600V 15.8A TO3P
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 9.1000 | $ 9.1 |
| 10+ | $ 8.0000 | $ 80 |
| 25+ | $ 6.7800 | $ 169.5 |
| 100+ | $ 6.1800 | $ 618 |
| 250+ | $ 5.8200 | $ 1455 |
In Stock: 1810
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 9.1
Total :$ 9.10
Delivery :
Payment :
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TK16J60W,S1VQ information
Toshiba Semiconductor and Storage TK16J60W,S1VQ technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-3P-3, SC-65-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-3P(N)
- Power Dissipation ( Max):130W (Tc)
- F E T Type:N-Channel
- F E T Feature:Super Junction
- Drain to Source Voltage ( Vdss):600 V
- Current - Continuous Drain ( Id) @ 25° C:15.8A (Ta)
- Rds On ( Max) @ Id, Vgs:190mOhm @ 7.9A, 10V
- Vgs(th) ( Max) @ Id:3.7V @ 790µA
- Gate Charge ( Qg) ( Max) @ Vgs:38 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1350 pF @ 300 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- EU RoHS Status:RoHS Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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