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Toshiba Semiconductor and Storage TK160F10N1L,LQ
MOSFET N-CH 100V 160A TO220SM
Manufacturer # :TK160F10N1L,LQ
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TK160F10N1L,LQ-DS
Datasheet :
TK160F10N1L,LQ Datasheet
TK160F10N1L,LQ DatasheetCustomer # :
Description : MOSFET N-CH 100V 160A TO220SM
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 2.3850 | $ 2.39 |
| 10+ | $ 2.0070 | $ 20.07 |
| 25+ | $ 1.8900 | $ 47.25 |
| 100+ | $ 1.6200 | $ 162 |
| 250+ | $ 1.5300 | $ 382.5 |
In Stock: 24347
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 2.385
Total :$ 2.38
Delivery :
Payment :
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TK160F10N1L,LQ information
Toshiba Semiconductor and Storage TK160F10N1L,LQ technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:175°C
- Mounting Type:Surface Mount
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-220SM(W)
- Power Dissipation ( Max):375W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):100 V
- Current - Continuous Drain ( Id) @ 25° C:160A (Ta)
- Rds On ( Max) @ Id, Vgs:2.4mOhm @ 80A, 10V
- Vgs(th) ( Max) @ Id:3.5V @ 1mA
- Gate Charge ( Qg) ( Max) @ Vgs:122 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:10100 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):6V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:3 (168 Hours,30°C/60%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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