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Toshiba Semiconductor and Storage TK14C65W5,S1Q
Manufacturer # :TK14C65W5,S1Q
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TK14C65W5,S1Q-DS
Datasheet : TK14C65W5,S1Q Datasheet
Customer # :
Description : MOSFET N-CH 650V 13.7A I2PAK
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In Stock: 65
MOQ :1 PCS
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Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
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Unit Price :$ 0
Total :$ 0.00
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TK14C65W5,S1Q information
Toshiba Semiconductor and Storage TK14C65W5,S1Q technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:I2PAK
- Power Dissipation ( Max):130W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):650 V
- Current - Continuous Drain ( Id) @ 25° C:13.7A (Ta)
- Rds On ( Max) @ Id, Vgs:300mOhm @ 6.9A, 10V
- Vgs(th) ( Max) @ Id:4.5V @ 690µA
- Gate Charge ( Qg) ( Max) @ Vgs:40 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1300 pF @ 300 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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