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Toshiba Semiconductor and Storage TK12J60W,S1VE(S
MOSFET N-CH 600V 11.5A TO3P
Manufacturer # :TK12J60W,S1VE(S
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TK12J60W,S1VE(S-DS
Datasheet :
TK12J60W,S1VE(S Datasheet
TK12J60W,S1VE(S DatasheetCustomer # :
Description : MOSFET N-CH 600V 11.5A TO3P
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| Quantity | Unit Price | Total |
In Stock: 1086
MOQ :1 PCS
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Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
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TK12J60W,S1VE(S information
Toshiba Semiconductor and Storage TK12J60W,S1VE(S technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:150°C
- Mounting Type:Through Hole
- Package / Case:TO-3P-3, SC-65-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-3P(N)
- Power Dissipation ( Max):110W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):600 V
- Current - Continuous Drain ( Id) @ 25° C:11.5A (Ta)
- Rds On ( Max) @ Id, Vgs:300mOhm @ 5.8A, 10V
- Vgs(th) ( Max) @ Id:3.7V @ 600µA
- Gate Charge ( Qg) ( Max) @ Vgs:25 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:890 pF @ 300 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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