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Toshiba Semiconductor and Storage TK10Q60W,S1VQ
MOSFET N-CH 600V 9.7A IPAK
Manufacturer # :TK10Q60W,S1VQ
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TK10Q60W,S1VQ-DS
Datasheet :
TK10Q60W,S1VQ Datasheet
TK10Q60W,S1VQ DatasheetCustomer # :
Description : MOSFET N-CH 600V 9.7A IPAK
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 3.2670 | $ 3.27 |
| 10+ | $ 2.1366 | $ 21.37 |
| 100+ | $ 1.4955 | $ 149.55 |
| 500+ | $ 1.2210 | $ 610.5 |
| 1000+ | $ 1.1326 | $ 1132.6 |
In Stock: 1575
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 3.267
Total :$ 3.27
Delivery :
Payment :
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TK10Q60W,S1VQ information
Toshiba Semiconductor and Storage TK10Q60W,S1VQ technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-251-3 Stub Leads, IPak
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:I-PAK
- Power Dissipation ( Max):80W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):600 V
- Current - Continuous Drain ( Id) @ 25° C:9.7A (Ta)
- Rds On ( Max) @ Id, Vgs:430mOhm @ 4.9A, 10V
- Vgs(th) ( Max) @ Id:3.7V @ 500µA
- Gate Charge ( Qg) ( Max) @ Vgs:20 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:700 pF @ 300 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:Vendor omitted MSL Rating information
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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