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Toshiba Semiconductor and Storage TK10P60W,RVQ
MOSFET N CH 600V 9.7A DPAK
Manufacturer # :TK10P60W,RVQ
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TK10P60W,RVQ-DS
Datasheet :
TK10P60W,RVQ Datasheet
TK10P60W,RVQ DatasheetCustomer # :
Description : MOSFET N CH 600V 9.7A DPAK
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 79+ | $ 1.1352 | $ 89.68 |
| 100+ | $ 1.0178 | $ 101.78 |
| 500+ | $ 0.9381 | $ 469.05 |
| 1000+ | $ 0.9261 | $ 926.1 |
| 2000+ | $ 0.9217 | $ 1843.4 |
In Stock: 7482
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.1352
Total :$ 1.14
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TK10P60W,RVQ information
Toshiba Semiconductor and Storage TK10P60W,RVQ technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:DPAK
- Power Dissipation ( Max):80W (Tc)
- F E T Type:N-Channel
- F E T Feature:Super Junction
- Drain to Source Voltage ( Vdss):600 V
- Current - Continuous Drain ( Id) @ 25° C:9.7A (Ta)
- Rds On ( Max) @ Id, Vgs:430mOhm @ 4.9A, 10V
- Vgs(th) ( Max) @ Id:3.7V @ 500µA
- Gate Charge ( Qg) ( Max) @ Vgs:20 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:700 pF @ 300 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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