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Toshiba Semiconductor and Storage TK10A80E,S4X
MOSFET N-CH 800V 10A TO220SIS
Manufacturer # :TK10A80E,S4X
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TK10A80E,S4X-DS
Datasheet :
TK10A80E,S4X Datasheet
TK10A80E,S4X DatasheetCustomer # :
Description : MOSFET N-CH 800V 10A TO220SIS
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 2.0880 | $ 2.09 |
| 50+ | $ 1.6803 | $ 84.02 |
| 100+ | $ 1.3826 | $ 138.26 |
| 500+ | $ 1.1699 | $ 584.95 |
| 1000+ | $ 0.9926 | $ 992.6 |
In Stock: 1648
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 2.088
Total :$ 2.09
Delivery :
Payment :
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TK10A80E,S4X information
Toshiba Semiconductor and Storage TK10A80E,S4X technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-220-3 Full Pack
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-220SIS
- Power Dissipation ( Max):50W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):800 V
- Current - Continuous Drain ( Id) @ 25° C:10A (Ta)
- Rds On ( Max) @ Id, Vgs:1Ohm @ 5A, 10V
- Vgs(th) ( Max) @ Id:4V @ 1mA
- Gate Charge ( Qg) ( Max) @ Vgs:46 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2000 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:Vendor omitted MSL Rating information
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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