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1 : $4.6170
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Toshiba Semiconductor and Storage TK090U65Z,RQ
DTMOS VI TOLL PD=230W F=1MHZ
Manufacturer # :TK090U65Z,RQ
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TK090U65Z,RQ-DS
Datasheet :
TK090U65Z,RQ Datasheet
TK090U65Z,RQ DatasheetCustomer # :
Description : DTMOS VI TOLL PD=230W F=1MHZ
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 4.6170 | $ 4.62 |
| 10+ | $ 3.8790 | $ 38.79 |
| 25+ | $ 2.7900 | $ 69.75 |
| 100+ | $ 2.4660 | $ 246.6 |
| 250+ | $ 2.4570 | $ 614.25 |
In Stock: 6354
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 4.617
Total :$ 4.62
Delivery :
Payment :
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TK090U65Z,RQ information
Toshiba Semiconductor and Storage TK090U65Z,RQ technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:150°C
- Mounting Type:Surface Mount
- Package / Case:8-PowerSFN
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TOLL
- Power Dissipation ( Max):230W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):650 V
- Current - Continuous Drain ( Id) @ 25° C:30A (Ta)
- Rds On ( Max) @ Id, Vgs:90mOhm @ 15A, 10V
- Vgs(th) ( Max) @ Id:4V @ 1.27mA
- Gate Charge ( Qg) ( Max) @ Vgs:47 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2780 pF @ 300 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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