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Toshiba Semiconductor and Storage TK040Z65Z,S1F
MOSFET N-CH 650V 57A TO247-4L
Manufacturer # :TK040Z65Z,S1F
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TK040Z65Z,S1F-DS
Datasheet :
TK040Z65Z,S1F Datasheet
TK040Z65Z,S1F DatasheetCustomer # :
Description : MOSFET N-CH 650V 57A TO247-4L
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 10.4400 | $ 10.44 |
| 10+ | $ 7.7130 | $ 77.13 |
| 25+ | $ 7.7040 | $ 192.6 |
| 100+ | $ 5.8140 | $ 581.4 |
| 500+ | $ 5.5890 | $ 2794.5 |
In Stock: 1522
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 10.44
Total :$ 10.44
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TK040Z65Z,S1F information
Toshiba Semiconductor and Storage TK040Z65Z,S1F technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:150°C
- Mounting Type:Through Hole
- Package / Case:TO-247-4
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-247-4L
- Power Dissipation ( Max):360W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):650 V
- Current - Continuous Drain ( Id) @ 25° C:57A (Ta)
- Rds On ( Max) @ Id, Vgs:40mOhm @ 28.5A, 10V
- Vgs(th) ( Max) @ Id:4V @ 2.85mA
- Gate Charge ( Qg) ( Max) @ Vgs:105 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:6250 pF @ 300 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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