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1 : $1.3680
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Toshiba Semiconductor and Storage TJ80S04M3L,LXHQ
MOSFET P-CH 40V 80A DPAK
Manufacturer # :TJ80S04M3L,LXHQ
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TJ80S04M3L,LXHQ-DS
Datasheet :
TJ80S04M3L,LXHQ Datasheet
TJ80S04M3L,LXHQ DatasheetCustomer # :
Description : MOSFET P-CH 40V 80A DPAK
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 1.3680 | $ 1.37 |
| 10+ | $ 1.1250 | $ 11.25 |
| 100+ | $ 0.8712 | $ 87.12 |
| 500+ | $ 0.7380 | $ 369 |
| 1000+ | $ 0.6012 | $ 601.2 |
In Stock: 7574
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.368
Total :$ 1.37
Delivery :
Payment :
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TJ80S04M3L,LXHQ information
Toshiba Semiconductor and Storage TJ80S04M3L,LXHQ technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:175°C
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:DPAK+
- Power Dissipation ( Max):100W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):40 V
- Current - Continuous Drain ( Id) @ 25° C:80A (Ta)
- Rds On ( Max) @ Id, Vgs:5.2mOhm @ 40A, 10V
- Vgs(th) ( Max) @ Id:3V @ 1mA
- Gate Charge ( Qg) ( Max) @ Vgs:158 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:7770 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):6V, 10V
- Vgs ( Max):+10V, -20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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