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Toshiba Semiconductor and Storage TJ60S06M3L(T6L1,NQ
MOSFET P-CH 60V 60A DPAK
Manufacturer # :TJ60S06M3L(T6L1,NQ
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TJ60S06M3L(T6L1,NQ-DS
Datasheet :
TJ60S06M3L(T6L1,NQ Datasheet
TJ60S06M3L(T6L1,NQ DatasheetCustomer # :
Description : MOSFET P-CH 60V 60A DPAK
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 1.0638 | $ 10.64 |
| 2000+ | $ 0.7092 | $ 1418.4 |
| 4000+ | $ 0.6691 | $ 2676.4 |
| 6000+ | $ 0.6285 | $ 3771 |
| 8000+ | $ 0.5474 | $ 4379.2 |
In Stock: 7200
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.0638
Total :$ 1.06
Delivery :
Payment :
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TJ60S06M3L(T6L1,NQ information
Toshiba Semiconductor and Storage TJ60S06M3L(T6L1,NQ technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:DPAK+
- Power Dissipation ( Max):100W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):60 V
- Current - Continuous Drain ( Id) @ 25° C:60A (Ta)
- Rds On ( Max) @ Id, Vgs:11.2mOhm @ 30A, 10V
- Vgs(th) ( Max) @ Id:3V @ 1mA
- Gate Charge ( Qg) ( Max) @ Vgs:156 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:7760 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):6V, 10V
- Vgs ( Max):+10V, -20V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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