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Toshiba Semiconductor and Storage TBC847B,LM

In Stock: 29733
MOQ: 1
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Toshiba Semiconductor and Storage TBC847B,LM technical specifications, attributes, parameters.

Category:Discrete Semiconductor Devices/Transistors - Bipolar (BJT) - Single
Product Status:Active
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Power - Max:320 mW
Supplier Device Package:SOT-23-3
Transistor Type:NPN
Current - Collector ( Ic) ( Max):150 mA
Voltage - Collector Emitter Breakdown ( Max):50 V
Vce Saturation ( Max) @ Ib, Ic:400mV @ 100mA, 5mA
Current - Collector Cutoff ( Max):30nA (ICBO)
D C Current Gain (h F E) ( Min) @ Ic, Vce:200 @ 2mA, 5V
Frequency - Transition:100MHz
EU RoHS Status:ROHS3 Compliant
MSL Rating:1 (Unlimited, 30°C/85%RH)
US ECCN:EAR99
HTS US:8541.21.0075
REACH Status:REACH is not affected
China RoHS Status:Green Symbol: Green and environmentally friendly product
TBC847B,LM provided by Toshiba Semiconductor and Storage
Toshiba America Electronic Components, Inc. (TAEC) is the North America electronic components business of Toshiba. TAEC offers a broad IC and discrete product line including high-end microcontrollers, ASICs and ASSPs for automotive, multimedia, industrial, telecoms and networking applications. The company also has a wide range of power semiconductor solutions as well as storage products including Enterprise and Consumer HDDs.TAEC was established in 1989, providing design, manufacturing, marketing and sales, with offices in United States and Latin America.

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Ratings and Reviews
Great Product

John D.

Excellent product quality and fast shipping service. Will definitely purchase again!

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Smooth transaction process and responsive customer support. Highly recommended!

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Mike R.

Accurate product description and arrived earlier than expected.

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