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Toshiba Semiconductor and Storage TBAS16,LM
DIODE GEN PURP 80V 215MA SOT23-3
Manufacturer # :TBAS16,LM
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :TBAS16,LM-DS
Datasheet :
TBAS16,LM Datasheet
TBAS16,LM DatasheetCustomer # :
Description : DIODE GEN PURP 80V 215MA SOT23-3
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| Quantity | Unit Price | Total |
| 6+ | $ 0.0149 | $ 0.09 |
| 10+ | $ 0.0145 | $ 0.15 |
In Stock: 22529
MOQ :1 PCS
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Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
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Unit Price :$ 0.0149
Total :$ 0.01
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TBAS16,LM information
Toshiba Semiconductor and Storage TBAS16,LM technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Single
- Product Status:Active
- Mounting Type:Surface Mount
- Package / Case:SOT-23-3 Flat Leads
- Supplier Device Package:SOT-23-3
- Speed:Standard Recovery >500ns, > 200mA (Io)
- Diode Type:Standard
- Current - Average Rectified ( Io):215mA
- Voltage - Forward ( Vf) ( Max) @ If:-
- Current - Reverse Leakage @ Vr:-
- Capacitance @ Vr, F:-
- Voltage - D C Reverse ( Vr) ( Max):80 V
- Reverse Recovery Time (trr):-
- Operating Temperature - Junction:-
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.10.0070
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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