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Toshiba Semiconductor and Storage SSM6K407TU,LF
MOSFET N-CH 60V 2A UF6
Manufacturer # :SSM6K407TU,LF
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :SSM6K407TU,LF-DS
Datasheet :
SSM6K407TU,LF Datasheet
SSM6K407TU,LF DatasheetCustomer # :
Description : MOSFET N-CH 60V 2A UF6
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.4050 | $ 0.41 |
| 10+ | $ 0.3177 | $ 3.18 |
| 100+ | $ 0.1764 | $ 17.64 |
| 1000+ | $ 0.1206 | $ 120.6 |
| 3000+ | $ 0.1080 | $ 324 |
In Stock: 14691
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.405
Total :$ 0.41
Delivery :
Payment :
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SSM6K407TU,LF information
Toshiba Semiconductor and Storage SSM6K407TU,LF technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:150°C
- Mounting Type:Surface Mount
- Package / Case:6-SMD, Flat Leads
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:UF6
- Power Dissipation ( Max):500mW (Ta)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):60 V
- Current - Continuous Drain ( Id) @ 25° C:2A (Ta)
- Rds On ( Max) @ Id, Vgs:300mOhm @ 1A, 10V
- Vgs(th) ( Max) @ Id:2V @ 1mA
- Gate Charge ( Qg) ( Max) @ Vgs:6 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:150 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):4V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.21.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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