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Toshiba Semiconductor and Storage SSM6K208FE,LF
MOSFET N-CH 30V 1.9A ES6
Manufacturer # :SSM6K208FE,LF
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :SSM6K208FE,LF-DS
Datasheet :
SSM6K208FE,LF Datasheet
SSM6K208FE,LF DatasheetCustomer # :
Description : MOSFET N-CH 30V 1.9A ES6
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.4140 | $ 0.41 |
| 10+ | $ 0.2772 | $ 2.77 |
| 100+ | $ 0.4140 | $ 41.4 |
| 500+ | $ 0.1464 | $ 73.2 |
| 1000+ | $ 0.1327 | $ 132.7 |
In Stock: 11940
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.414
Total :$ 0.41
Delivery :
Payment :
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SSM6K208FE,LF information
Toshiba Semiconductor and Storage SSM6K208FE,LF technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:150°C
- Mounting Type:Surface Mount
- Package / Case:SOT-563, SOT-666
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:ES6
- Power Dissipation ( Max):500mW (Ta)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:1.9A (Ta)
- Rds On ( Max) @ Id, Vgs:133mOhm @ 1A, 4V
- Vgs(th) ( Max) @ Id:1V @ 1mA
- Gate Charge ( Qg) ( Max) @ Vgs:1.9 nC @ 4 V
- Input Capacitance ( Ciss) ( Max) @ Vds:123 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):1.8V, 4V
- Vgs ( Max):±12V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.21.0095
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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