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1 : $0.3635
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Toshiba Semiconductor and Storage SSM6J53FE(TE85L,F)
MOSFET P-CH 20V 1.8A ES6
Manufacturer # :SSM6J53FE(TE85L,F)
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :SSM6J53FE(TE85L,F)-DS
Datasheet :
SSM6J53FE(TE85L,F) Datasheet
SSM6J53FE(TE85L,F) DatasheetCustomer # :
Description : MOSFET P-CH 20V 1.8A ES6
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.5453 | $ 5.45 |
| 4000+ | $ 0.3635 | $ 1454 |
| 8000+ | $ 0.3450 | $ 2760 |
| 12000+ | $ 0.3204 | $ 3844.8 |
| 28000+ | $ 0.3130 | $ 8764 |
In Stock: 37
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.5453
Total :$ 0.55
Delivery :
Payment :
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SSM6J53FE(TE85L,F) information
Toshiba Semiconductor and Storage SSM6J53FE(TE85L,F) technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:SOT-563, SOT-666
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:ES6
- Power Dissipation ( Max):500mW (Ta)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:1.8A (Ta)
- Rds On ( Max) @ Id, Vgs:136mOhm @ 1A, 2.5V
- Vgs(th) ( Max) @ Id:1V @ 1mA
- Gate Charge ( Qg) ( Max) @ Vgs:10.6 nC @ 4 V
- Input Capacitance ( Ciss) ( Max) @ Vds:568 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):1.5V, 2.5V
- Vgs ( Max):±8V
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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