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Toshiba Semiconductor and Storage SSM6J502NU,LF
Manufacturer # :SSM6J502NU,LF
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :SSM6J502NU,LF-DS
Datasheet : SSM6J502NU,LF Datasheet
Customer # :
Description : MOSFET P-CH 20V 6A 6UDFNB
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In Stock: 9000
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.468
Total :$ 0.47
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Payment :
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SSM6J502NU,LF information
Toshiba Semiconductor and Storage SSM6J502NU,LF technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:6-WDFN Exposed Pad
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:6-UDFNB (2x2)
- Power Dissipation ( Max):1W (Ta)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:6A (Ta)
- Rds On ( Max) @ Id, Vgs:23.1mOhm @ 4A, 4.5V
- Vgs(th) ( Max) @ Id:1V @ 1mA
- Gate Charge ( Qg) ( Max) @ Vgs:24.8 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1800 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):1.5V, 4.5V
- Vgs ( Max):±8V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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