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1 : $0.3690
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Toshiba Semiconductor and Storage SSM6J422TU,LXHF
SMOS P-CH VDSS=-20V, VGSS=+6/-8V
Manufacturer # :SSM6J422TU,LXHF
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :SSM6J422TU,LXHF-DS
Datasheet :
SSM6J422TU,LXHF Datasheet
SSM6J422TU,LXHF DatasheetCustomer # :
Description : SMOS P-CH VDSS=-20V, VGSS=+6/-8V
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.3690 | $ 0.37 |
| 10+ | $ 0.3672 | $ 3.67 |
| 100+ | $ 0.3096 | $ 30.96 |
| 500+ | $ 0.2421 | $ 121.05 |
| 1000+ | $ 0.1971 | $ 197.1 |
In Stock: 10678
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.369
Total :$ 0.37
Delivery :
Payment :
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SSM6J422TU,LXHF information
Toshiba Semiconductor and Storage SSM6J422TU,LXHF technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:150°C
- Mounting Type:Surface Mount
- Package / Case:6-SMD, Flat Leads
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:UF6
- Power Dissipation ( Max):1W (Ta)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:4A (Ta)
- Rds On ( Max) @ Id, Vgs:42.7mOhm @ 3A, 4.5V
- Vgs(th) ( Max) @ Id:1V @ 1mA
- Gate Charge ( Qg) ( Max) @ Vgs:12.8 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:840 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):1.5V, 4.5V
- Vgs ( Max):+6V, -8V
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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