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Toshiba Semiconductor and Storage SSM6J216FE,LF
MOSFET P-CHANNEL 12V 4.8A ES6
Manufacturer # :SSM6J216FE,LF
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :SSM6J216FE,LF-DS
Datasheet :
SSM6J216FE,LF Datasheet
SSM6J216FE,LF DatasheetCustomer # :
Description : MOSFET P-CHANNEL 12V 4.8A ES6
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.5580 | $ 0.56 |
| 10+ | $ 0.3447 | $ 3.45 |
| 100+ | $ 0.2208 | $ 22.08 |
| 500+ | $ 0.1671 | $ 83.55 |
| 1000+ | $ 0.1498 | $ 149.8 |
In Stock: 4734
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.558
Total :$ 0.56
Delivery :
Payment :
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SSM6J216FE,LF information
Toshiba Semiconductor and Storage SSM6J216FE,LF technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:150°C
- Mounting Type:Surface Mount
- Package / Case:SOT-563, SOT-666
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:ES6
- Power Dissipation ( Max):700mW (Ta)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):12 V
- Current - Continuous Drain ( Id) @ 25° C:4.8A (Ta)
- Rds On ( Max) @ Id, Vgs:32mOhm @ 3.5A, 4.5V
- Vgs(th) ( Max) @ Id:1V @ 1mA
- Gate Charge ( Qg) ( Max) @ Vgs:12.7 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1040 pF @ 12 V
- Drive Voltage ( Max Rds On, Min Rds On):1.5V, 4.5V
- Vgs ( Max):±8V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.21.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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