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Toshiba Semiconductor and Storage SSM6J213FE(TE85L,F

Name: SSM6J213FE(TE85L,F
Brand: Toshiba Semiconductor and Storage
SKU: DS-6157155
Price: 0.324 USD
Availability: InStock
Rating: 4.8 (3 reviews)

MOSFET P CH 20V 2.6A ES6

Manufacturer # :SSM6J213FE(TE85L,F

Manufacturer :Toshiba Semiconductor and Storage

Dasenic # :SSM6J213FE(TE85L,F-DS

Datasheet :

SSM6J213FE(TE85L,F Datasheet

Customer # :

Customer #

Description : MOSFET P CH 20V 2.6A ES6

Pricing (USD) : *To apply for a price, please click the Send Target Price button

Quantity	Unit Price	Total
1+	$ 0.3240	$ 0.32
10+	$ 0.2475	$ 2.48
100+	$ 0.1458	$ 14.58
1000+	$ 0.0918	$ 91.8
4000+	$ 0.0837	$ 334.8

In Stock: 11250

MOQ :1 PCS

Packaging :-

Delivery Time :Ship Within 48 Hours

Shipping Origin :Shenzhen or Hong Kong Warehouse

Quantity :

Unit Price :$ 0.324

Total :$ 0.32

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SSM6J213FE(TE85L,F information

Toshiba Semiconductor and Storage SSM6J213FE(TE85L,F technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Active
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Technology:MOSFET (Metal Oxide)
Supplier Device Package:ES6
Power Dissipation ( Max):500mW (Ta)
F E T Type:P-Channel
F E T Feature:-
Drain to Source Voltage ( Vdss):20 V
Current - Continuous Drain ( Id) @ 25° C:2.6A (Ta)
Rds On ( Max) @ Id, Vgs:103mOhm @ 1.5A, 4.5V
Vgs(th) ( Max) @ Id:1V @ 1mA
Gate Charge ( Qg) ( Max) @ Vgs:4.7 nC @ 4.5 V
Input Capacitance ( Ciss) ( Max) @ Vds:290 pF @ 10 V
Drive Voltage ( Max Rds On, Min Rds On):1.5V, 4.5V
Vgs ( Max):±8V
EU RoHS Status:RoHS Compliant
REACH Status:REACH is not affected
US ECCN:EAR99
China RoHS Status:Green Symbol: Green and environmentally friendly product

Download datasheets and manufacturer documentation for Toshiba Semiconductor and Storage SSM6J213FE(TE85L,F
Datasheet:
SSM6J213FE(TE85L,F,

Toshiba Semiconductor and Storage SSM6J213FE(TE85L,F Environmental and export classification status description

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