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Toshiba Semiconductor and Storage SSM5N16FUTE85LF
MOSFET N-CH 20V 100MA USV
Manufacturer # :SSM5N16FUTE85LF
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :SSM5N16FUTE85LF-DS
Datasheet :
SSM5N16FUTE85LF Datasheet
SSM5N16FUTE85LF DatasheetCustomer # :
Description : MOSFET N-CH 20V 100MA USV
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.3330 | $ 0.33 |
| 10+ | $ 0.2340 | $ 2.34 |
| 100+ | $ 0.1179 | $ 11.79 |
| 1000+ | $ 0.0819 | $ 81.9 |
| 3000+ | $ 0.0720 | $ 216 |
In Stock: 10091
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.333
Total :$ 0.33
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SSM5N16FUTE85LF information
Toshiba Semiconductor and Storage SSM5N16FUTE85LF technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:5-TSSOP, SC-70-5, SOT-353
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:5-SSOP
- Power Dissipation ( Max):200mW (Ta)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:100mA (Ta)
- Rds On ( Max) @ Id, Vgs:3Ohm @ 10mA, 4V
- Vgs(th) ( Max) @ Id:-
- Gate Charge ( Qg) ( Max) @ Vgs:-
- Input Capacitance ( Ciss) ( Max) @ Vds:9.3 pF @ 3 V
- Drive Voltage ( Max Rds On, Min Rds On):1.5V, 4V
- Vgs ( Max):±10V
- EU RoHS Status:RoHS Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.21.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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