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Toshiba Semiconductor and Storage SSM5H90ATU,LF
MOSFET N-CH 20V 2.4A UFV
Manufacturer # :SSM5H90ATU,LF
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :SSM5H90ATU,LF-DS
Datasheet :
SSM5H90ATU,LF Datasheet
SSM5H90ATU,LF DatasheetCustomer # :
Description : MOSFET N-CH 20V 2.4A UFV
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.4410 | $ 0.44 |
| 10+ | $ 0.2709 | $ 2.71 |
| 100+ | $ 0.1721 | $ 17.21 |
| 500+ | $ 0.1292 | $ 64.6 |
| 1000+ | $ 0.1153 | $ 115.3 |
In Stock: 3810
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.441
Total :$ 0.44
Delivery :
Payment :
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SSM5H90ATU,LF information
Toshiba Semiconductor and Storage SSM5H90ATU,LF technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:150°C
- Mounting Type:Surface Mount
- Package / Case:5-SMD, Flat Leads
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:UFV
- Power Dissipation ( Max):500mW (Ta)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:2.4A (Ta)
- Rds On ( Max) @ Id, Vgs:65mOhm @ 1.5A, 4V
- Vgs(th) ( Max) @ Id:1.2V @ 1mA
- Gate Charge ( Qg) ( Max) @ Vgs:2.2 nC @ 4 V
- Input Capacitance ( Ciss) ( Max) @ Vds:200 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):2.5V, 4V
- Vgs ( Max):±10V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.21.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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